2. GP-EAM structure and simulations

2. GP-EAM structure and simulations
The GP-EAMs presented in this work are based on two graphene layers separated by 35 nm of silicon nitride below a polymer waveguide. Figure 1(a) shows the cross section of the device. In order to avoid mechanical damage to the graphene layers, the surface of the underlying substrate should be sufficiently smooth and without steep edges. As in previous work the graphene was transferred onto previously structured waveguides, either a surface planarization as in [5] or spin-coating of an additional layer as in [3] was needed to obtain a smooth substrate surface. This increases the fabrication effort and, in the latter case, reduces the graphene-light interaction due to the increased distance between waveguide and graphene.

Fig. 1 (a) Cross section (not to scale) and (b) top view of a GP-EAM. The micrograph shows the structured and contacted graphene-silicon nitride-graphene stack of the fabricated structures before spin-coating of the waveguide layer.
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It should be noted that, unlike in previous work, here the graphene layers are located below the waveguide and not above. This enables the transfer of the graphene layers to the unstructured polymer bottom cladding, thus omitting the need for such surface planarization and facilitating a wafer-scale processing of graphene-based optoelectronic devices. Furthermore, the polymer waveguide and top cladding act as a cover for the active graphene layers shielding it from environmental influence.

Результаты (английский) 1:

2. GP-EAM structure and simulationsThe GP-EAMs presented in this work are based on two layers separated by CNRS 35 nm of silicon nitride below a polymer waveguide. Figure 1 (a) shows the cross section of the device. In order to avoid mechanical damage to the CNRS layers, the surface of the underlying substrate should be sufficiently smooth and without steep edges. As in previous work the CNRS was transferred onto previously structured waveguides, either a surface planarization as in [5] or spin-coating of an additional layer as in [3] was needed to obtain a smooth substrate surface. This increases the fabrication of effort and, in the latter case, reduces the CNRS-light interaction due to the increased distance between waveguide and CNRS. Fig. 1 (a) Cross section (not to scale) and (b) top view of a GP-EAM. The micrograph shows the structured and CNRS-contacted silicon nitride-stack of the CNRS of pre-fabricated structures before the spin-coating of the waveguide layer.Download Full Size | PPT Slide | PDFIt should be noted that, unlike in previous work, here the CNRS layers are located below the waveguide and not above. This enables the transfer of the layers to the CNRS unstructured polymer bottom cladding, thus omitting the need for such surface planarization and facilitating a wafer-scale processing of CNRS-based optoelectronic devices. Furthermore, the polymer waveguide and top cladding act as a cover for the active layers CNRS shielding it from environmental influence.

Результаты (английский) 2:

The GP-the EAM 2. structure and Simulations
of The EAMS the GP-Presented in the this work are based on the layers of graphene to two two separated by 35 nm of silicon nitride below a polymer waveguide . Figure 1 (a) shows the cross section of the device. In order to avoid mechanical damage to the graphene layers, the surface of the underlying substrate should be sufficiently smooth and without steep edges. As in previous work the graphene was transferred onto previously structured waveguides, either a surface planarization as in [ 5] or spin-coating of an additional layer as in [ 3] was needed to obtain a smooth substrate surface. Increases the fabrication This-effort and, in the the latter a case, Reduces the light of graphene-Interaction of due to the distance Between Increased Waveguide and of graphene.

The Fig. 1 (a) Cross section (not to scale) and (b) top view of a GP-EAM. Shows the Micrograph of The structured and contacted of graphene-silicon Nitride-of graphene stack of the fabricated Structures the before of spin-coating of the Waveguide of layer.
Download of Full Size | PPT Slide | A PDF
It Should the BE Noted That, unlike in for LEO previous work, the layers of graphene the found here are Located the below the Waveguide and not the above. This enables the transfer of the graphene layers to the unstructured polymer bottom cladding, thus omitting the need for such surface planarization and facilitating a wafer-scale processing of graphene-based optoelectronic devices. Furthermore, the polymer waveguide and top cladding act as a cover for the active graphene layers shielding it from environmental influence.

Результаты (английский) 3:

2. gp - eam structure and simulationsthe gp - EAMs presented in this work are based on two graphene layers separated by 35 nm of silicon nitride below a polymer waveguide. figure 1 (a) shows the cross section of the device. in order to avoid mechanical damage to the graphene layers, the surface of the underlying substrate should be sufficiently smooth and without district first floor. as in previous work the graphene was transferred onto previously structured waveguides, either a surface planarization as in [5] or spin - coating of an additional layer as in [3] was needed to obtain a smooth substrate surface. this increases the fabrication effort and, in the latter case, reduces the graphene light interaction due to the increased distance between waveguide and graphene.fig 1 (a) cross section (not to scale) and (b) top view of a gp - eam. the micrograph shows the structured and contacted graphene - silicon nitride - graphene stack of the fabricated structures for spin - coating of the waveguide layer.download full size | ppt slide | pdfit should be noted that, unlike in previous work, here the graphene layers are located below the waveguide and not above. this enables the transfer of the graphene layers to the unstructured polymer bottom cladding, and omitting the need for such surface planarization and facilitating a close at each other - scale processing of graphene based optoelectronic devices. furthermore, the polymer waveguide and top cladding act as a cover for the active graphene layers shielding it from environmental influence.